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ROHM Adds Surface-Mount Packages to 600 V Super Junction MOSFET Family

ROHM has expanded its 600 V Super Junction MOSFET family with DFN8080-5L and TOLL surface-mount packages. The new R60xxXNx and PrestoMOS R60xxWNx series combine standard 3 V to 5 V gate thresholds with improved thermal performance and industry-standard footprints.

Uploaded image ROHM has expanded its 600 V Super Junction MOSFET portfolio with new surface-mount versions in DFN8080-5L and TOLL packages. The additions bring the company's R60xxXNx and PrestoMOS R60xxWNx series into industry-standard footprints while retaining gate drive characteristics commonly used by existing designs.

The new packages target power supplies for AI servers, data centers, industrial equipment, and other applications where higher power density and improved thermal performance are increasingly important. ROHM also states that the standardized package footprints make it easier to qualify alternative sources and replace existing devices in established power supply designs.

Standard Footprints and Gate Drive

The new devices are available in the DFN8080-5L package, measuring 8.0 mm × 8.0 mm × 0.85 mm, and the larger TOLL package at 11.68 mm × 9.9 mm × 2.3 mm. Both offer surface-mount alternatives to the company's existing through-hole package options while providing improved heat dissipation for high-power applications.

ROHM has also set the gate threshold voltage between 3 V and 5 V, matching the range used by many standard Super Junction MOSFETs. According to the company, this allows the new devices to operate across a broad range of existing gate-drive conditions without requiring changes to the drive circuitry.

The use of market-standard footprints is intended to simplify replacement in existing power supply circuits while supporting second-source strategies where supply chain flexibility is a consideration.

Two MOSFET Families

The lineup includes 21 devices in the R60xxXNx family and 11 devices in the PrestoMOS R60xxWNx family. ROHM positions the R60xxXNx series for applications requiring high-speed switching, while the PrestoMOS devices are optimized for faster reverse recovery characteristics. The company also states that both families offer improved admittance characteristics and lower loss than the previous R60xxYNx and PrestoMOS R60xxVNx series.

Available on-resistance values span from 26 mΩ to 204 mΩ across the two product families, allowing designers to select devices according to application and efficiency requirements.

Production and Availability

Mass production began in June 2026, with a sample price of US$7.00 per device. Selected TOLL package devices are available through distributors including DigiKey. ROHM also plans to expand the family with 650 V Super Junction MOSFETs and next-generation products.

Learn more and read the original announcement at the ROHM website.


Technology Overview

ROHM's new R60xxXNx and PrestoMOS R60xxWNx are 600 V Super Junction MOSFETs offered in industry-standard DFN8080-5L and TOLL surface-mount packages. The devices combine standard 3 V to 5 V gate threshold voltages with improved thermal performance, package compatibility, and on-resistance options ranging from 26 mΩ to 204 mΩ for high-power switching applications.

Frequently Asked Questions

Which packages are available for the new ROHM 600 V Super Junction MOSFETs?

The new devices are available in DFN8080-5L and TOLL surface-mount packages, expanding the existing package lineup.

What is the difference between the R60xxXNx and PrestoMOS R60xxWNx series?

ROHM states that the R60xxXNx family is intended for high-speed switching, while the PrestoMOS R60xxWNx series is optimized for faster reverse recovery characteristics.

What gate threshold voltage do the new MOSFETs use?

The devices use a gate threshold voltage between 3 V and 5 V, matching a range commonly used by standard Super Junction MOSFETs.

About the author

ROHM Semiconductor

ROHM Co., Ltd. is a leading global semiconductor manufacturer headquartered in Kyoto, Japan. The company specialises in advanced power and analogue ICs, SiC devices, and discrete components that drive energy efficiency and performance across automotive, industrial, and consumer sectors.

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