ROHM Launches 650 V IGBTs with Low Conduction Loss

ROHM has developed its 4th Generation 650 V IGBTs for automotive electric compressors and HV heaters, as well as inverters for industrial equipment. The new automotive-grade devices achieve a typical VCE(sat) as low as 1.55 V, while providing a short-circuit withstand time of 7 µs at Tj = 25°C. The products also comply with the AEC-Q101 automotive reliability standard.

The new generation includes devices in the RGAxxTS65HR and RGAxxTS65EHR series, supplied in TO-247N packages, along with SG83xxWN bare wafer products.

Low Loss and Short-Circuit Tolerance

ROHM redesigned the device structure, including the process and edge termination structure, to reduce conduction and switching losses while increasing current density. The new IGBTs maintain a short-circuit withstand time of 7 µs at Tj = 25°C despite the trade-off between lower loss and short-circuit tolerance.

Short-circuit tolerance is particularly important in inverter and heater circuits, where the switching device must withstand a short circuit for the time needed to detect and interrupt the overcurrent.

The TO-247N devices operate across a junction temperature range of -40°C to +175°C. Versions are available with and without a built-in fast recovery diode.

Automotive and Industrial Power Applications

The 650 V IGBTs are designed for automotive auxiliary systems where silicon IGBTs continue to be used, including electric compressors and HV heaters such as PTC and coolant heaters. ROHM is also targeting inverters for industrial equipment, including motors and compressors.

The current lineup consists of 12 products in the TO-247N package and selected SG83xxWN bare wafer products. ROHM is also developing 12 devices in the TO-247-4L package under the RGAxxTR65HR and RGAxxTR65EHR series.

SPICE models, PLECS models and other circuit design materials are available from ROHM for evaluation and simulation of the new devices.

The TO-247N products and selected bare wafer products are available now.

Learn more and read the original announcement at rohm.com.

Technology Overview

ROHM's 4th Generation 650 V IGBTs target automotive electric compressors, HV heaters and industrial inverters. The devices achieve VCE(sat) as low as 1.55 V while maintaining a 7 µs short-circuit withstand time at Tj = 25°C. Automotive-grade products comply with AEC-Q101.

FAQs

What are ROHM's new 650 V IGBTs?

They are 4th Generation 650 V insulated gate bipolar transistors developed for switching applications in automotive auxiliary systems and industrial equipment.

What is technically notable about the new IGBTs?

ROHM has reduced conduction and switching losses while maintaining a 7 µs short-circuit withstand time at Tj = 25°C. Typical VCE(sat) is as low as 1.55 V.

Where can the new ROHM IGBTs be used?

Applications include automotive electric compressors, HV heaters such as PTC and coolant heaters, and industrial equipment inverters.