ESDM1021 ESD Protection Diode

Introduction

The onsemi ESDM1021 is a compact bidirectional, single-line ESD protection diode intended for low-voltage, voltage-sensitive interfaces. Its X4DFN-2 01005 package measures just 0.445 mm × 0.24 mm × 0.18 mm, making it suited to highly space-constrained designs where an external protection device is still required.

The device is specified for IEC 61000-4-2 Level 4 ESD protection, including contact- and air-discharge events up to ±30 kV. It combines this protection capability with low leakage and relatively low junction capacitance for a protection component.

What it does

ESDM1021 protects one signal or power line using a bidirectional configuration. It is intended for voltage-sensitive components, GPIO interfaces, low-voltage power lines, and 1.8 V power-line protection.

Its 2.0 V working peak reverse voltage establishes the intended operating range, while the reverse leakage current is specified at up to 100 nA at 2.0 V, with a 1.0 nA typical value. The diode’s breakdown voltage is specified from 3.7 V to 5.7 V at 1 mA, with a typical value of 4.5 V.

For transient events, the part is rated for a 10 A reverse peak pulse current with an 8/20 µs waveform. Typical clamping voltage is 5.3 V at 10 A for that waveform, with a 6.5 V maximum specification. TLP data lists typical clamping voltages of 4.9 V at 8 A and 5.4 V at 16 A, alongside a 0.074 Ω dynamic resistance measured with a 100 ns TLP pulse.

Applications

• ESD protection for individual GPIO lines
• Protection of 1.8 V power rails
• Low-voltage interface lines connected to voltage-sensitive ICs
• Compact portable and miniaturized electronics with limited PCB area
• Single-line transient protection near external-accessible connections

Design considerations

The ESDM1021 is a one-line, bidirectional device, so the protected net must be compatible with its 2.0 V working peak reverse-voltage rating. Designers should also account for the specified breakdown and clamping characteristics when evaluating the voltage tolerance of the protected circuitry during ESD or pulse events.

Junction capacitance is specified at 18 pF typical and 23 pF maximum at 0 V and 1 MHz. This should be considered when adding the device to interfaces where line capacitance affects signal behavior.

The very small X4DFN-2 01005 package can reduce board area but requires assembly processes capable of handling a 0.445 mm × 0.24 mm × 0.18 mm component. Thermal behavior is specified with a 400 °C/W junction-to-ambient thermal resistance, and the junction and storage temperature range is −55 °C to +150 °C.

Availability and further information

Further product details are available through the Mouser Electronics source link and the datasheet link provided on this page.